| PART |
Description |
Maker |
| 2SC1741AS 2SD1484 2SD1484K A5800323 2SC3359S 2SC33 |
50V,0.5A medium power transistor
Transistors > Small Signal Bipolar Transistors(up to 0.6W)
Medium Power Transistor (50V, 0.5A)
From old datasheet system
Medium Power Transistor (50V/ 0.5A)
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 300MA I(C) | SPAK
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 500MA I(C) | SPAK
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体管|晶体管|叩| 50V五（巴西）总裁| 500mA的一（c）| SPAK
|
Rohm
|
| DZTA42 |
Medium Power Bipolar Transistors
|
Diodes, Inc.
|
| 2SA1759 A5800340 2SC4620 2SC4505 2SA1759T100P |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
From old datasheet system
High-Voltage Switching Transistor (Camera strobes and Telephone, Power supply) (-400V, -0.1A)
High-Coltage Switching Transistor
|
ROHM
|
| AT-42035 |
Up to 6 GHz Medium Power Silicon Bipolar Transistor GHz中等功率硅双极晶体管
|
HIROSE ELECTRIC Co., Ltd.
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
|
| 2SC5060 2SC5060TV2M |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
Power transistor (9010V, 3A)
Power transistor (9010V/ 3A)
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
|
Rohm CO.,LTD.
|
| AT-42010 |
Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip(高达6 GHz中等功率硅双极型晶体 GHz中等功率硅双极晶体管芯片（高 GHz的中等功率硅双极型晶体管
|
Agilent(Hewlett-Packard)
HIROSE ELECTRIC Co., Ltd.
|
| UMT2907A MMST2907 SST2907A MMST2907A PN2907A |
Transistors > Small Signal Bipolar Transistors(up to 0.6W)
PNP Medium Power Transistor (Switching)
|
ROHM[Rohm]
|
| SMDJ100A SMDJ110A SMDJ130A SMDJ120A SMDJ150 SMDJ17 |
100.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
110.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
130.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
120.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
150.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
170.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
160.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
|
MDE Semiconductor
|
| 2SD2657 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
From old datasheet system
|
ROHM
|
| 2SD2144S 2SD2114K 2SD2114S |
Transistors > Small Signal Bipolar Transistors(up to 0.6W)
20V,0.5A high-current gain medium power transistor
|
ROHM
|
| BF620 BF620-T1 |
NPN silicon high voltage medium-power transistor.
The Small-signal NPN Silicon High Voltage Medium-Power Transistor
|
Planeta
List of Unclassifed Manufacturers
ETC[ETC]
Electronic Theatre Controls, Inc.
|
